SOAMIANGOLA GIANNA RAMASOMBAZAHA; ELISÉE RASTEFANO. Enhancing FD-SOI MOSFET Performance and Reliability: A Comparative Study of High-k TiO₂ versus Standard SiO₂ Buried Oxides. Revue Internationale de la Recherche Scientifique (Revue-IRS), [S. l.], v. 4, n. 1, p. 707–724, 2026. DOI: 10.5281/zenodo.18450813. Disponível em: https://www.revue-irs.com/index.php/home/article/view/1477. Acesso em: 11 feb. 2026.